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BUK9Y59-60E,115 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: LFPAK56, Power-SO8
- Description: N-CHANNEL 60 V, 59 MILLI OHMS LO
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BUK9Y59-60E,115 Specifications:
- MfrPart.: BUK9Y59-60E,115
- Mfr: NXP USA Inc.
- Description: N-CHANNEL 60 V, 59 MILLI OHMS LO
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: Automotive, AEC-Q101, TrenchMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 16.7A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 5V
- RdsOn(Max)@IdVgs: 52mOhm @ 5A, 10V
- Vgs(th)(Max)@Id: 2.1V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 6.1 nC @ 5 V
- Vgs(Max): ±10V
- InputCapacitance(Ciss)(Max)@Vds: 715 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 37W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: LFPAK56, Power-SO8
- BUK9Y59-60E,115 NXP, N-CHANNEL 60 V, 59 MILLI OHMS LO, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BUK9Y59-60E,115, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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