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BUK6E2R3-40C,127 Images
- Manufacturer: NXP
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: Through Hole
- Description: PFET, 120A I(D), 40V, 0.0036OHM
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BUK6E2R3-40C,127 Specifications:
- MfrPart.: BUK6E2R3-40C,127
- Mfr: NXP USA Inc.
- Description: PFET, 120A I(D), 40V, 0.0036OHM
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: 278
- Series: Tube
- PartStatus: Automotive, AEC-Q101, TrenchMOS™
- FETType: Active
- Technology: N-Channel
- DraintoSourceVoltage(Vdss): MOSFET (Metal Oxide)
- Current-ContinuousDrain(Id)@25°C: 40 V
- DriveVoltage(MaxRdsOnMinRdsOn): 120A (Tc)
- RdsOn(Max)@IdVgs: 10V
- Vgs(th)(Max)@Id: 2.3mOhm @ 25A, 10V
- GateCharge(Qg)(Max)@Vgs: 2.8V @ 1mA
- Vgs(Max): 260 nC @ 10 V
- InputCapacitance(Ciss)(Max)@Vds: ±16V
- FETFeature: 15.1 pF @ 25 V
- PowerDissipation(Max): -
- OperatingTemperature: 306W (Tc)
- MountingType: -55°C ~ 175°C (TJ)
- SupplierDevicePackage: Through Hole
- BUK6E2R3-40C,127 NXP, PFET, 120A I(D), 40V, 0.0036OHM, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BUK6E2R3-40C,127, NXP authentic parts in stock from NXP authorized distributors, order today, can ship immediately.
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